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PDF MCM32A32 Data sheet ( Hoja de datos )
| Número de pieza | MCM32A32 | |
| Descripción | 128KB and 256KB Secondary Cache Fast Static RAM Modules | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
• SEMICONDUCTOR
TECHNICAL DATA
128KB and 256KB
Secondary Cache
Fast Static RAM Modules
With Tag for 486 Processor Based Systems
MCM32A32
MCM32A64
The MCM32A32 and MCM32A64 are two products in Motorola's asynchronous sec-
ondary cache module family for the 486 processor. The modules are configured with
32-bit data, 8-bit tag, and an altered bit for cache writeback. The family supports all
cache sizes of the 486 processor. They are offered in 33 and 50 MHz versions:
The 32A32 is a 128KB single bank cache of 32K x 32. The tag is an 8K x 8, and the
altered bit is 8K x 1.
The 32A64 is a 256KB double bank cache of 64K x 32. The tag is 16K x 8 and the
altered bit is 16K x 1.
The cache family is designed to interface with popular 486 chipsets with on-board
cache controllers.
Cache upgrades are seamless, eliminating the need for motherboard jumpers.
PDO, 1, 2 are reserved for density identification:
= = =MCM32A32: PDO gnd, PD1 gnd, PD2 open
MCM32A64: PDO =open, PD1 =open, PD2 =gnd
• 64 Position Dual Readout SIMM for Circuit Density
• Single 5 V ± 10% Power Supply
• All Inputs and Outputs are TTL Compatible
• Three State Outputs
• Fast Access Times/Cycle Times: 15 ns/50 MHz, 20 ns/33 MHz
• Cache Byte Write, Byte Chip Enable, Bank Output Enable
• Tag Write Enable, Altered Write Enable, Tag/Altered Chip Enable
• Decoupling Capacitors Are Used For Each Fast Static RAM
• High Quality Multi-Layer FR4 PWB With Separate Power and Ground Plane
MOTOROLA FAST SRAM DATA
MCM32A32.MCM32A64
5·3
1 page  
TRUTH TABLE (X =Don't Care)
EGW
Mode
VCC Current
H X X Not Selected
ISB1,ISB2
L H H Output Disabled
ICCA
L LH
Read
ICCA
LXL
Write
ICCA
NOTE: E =Exx, ET; W =Wxx, WT, WA; G =GA, GB
Output
High-Z
High-Z
Dout
High-Z
Cycle
-
-
Read Cycle
Write Cycle
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
-0.5to + 7.0
V
Voltage Relative to VSS For Any Pin
ExceptVcc
Yin, Vout - 0.5 to VCC + 0.5 V
Output Current
lout ±20 rnA
Power Dissipation
PD 11.0 W
Temperature Under Bias
Tbias
-10to+85
°c
Operating Temperature
TA
Oto+ 70
°C
Storage Temperature - Plastic
Tstg
- 55 to + 125
°C
NOTE: Permanent deVice damage may occur If ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for ex-
tended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid .
application of any voltage higher than maxi-
mum rated voltages to this high-impedance cir-
cuit.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal eqUilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.
DC OPERATING CONDITIONS AND CHARACTERISTICS
= =(Vee 5.0 V ±1 0%, TA 0 to 70oe, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Supply Voltage (Operating Voltage Range)
VCC
Input High Voltage
VIH
Input Low Voltage
VIL
• VIL (min) =- 0.5 V dc; VIL (min) =- 2.0 V ac (pulse Width S20 ns)
= =•• VIH (max) VCC + 0.3 V dc; VIH (max) VCC + 2.0 V ac (pulse width S 20 ns)
4.5
2.2
-0.5*
5.0
-
-
Max
5.5
VCC + 0.3**
0.8
Unit
V
V
V
DC CHARACTERISTICS
Parameter
=Input Leakage Current (All Inputs, Yin 0 to Vec)
= = =Output Leakage Current (E VIH or G VIH, Vout 0 to VCC)
=-Output High Voltage (IOH 4.0 rnA)
=Output Low Voltage (IOL 8.0 rnA)
Symbol
Ilkg(l)
Ilkg(O)
VOH
VOL
Min
-
-
2.4
-
Max Unit
±10 !1A
±10 I1A
-V
0.4 V
POWER SUPPLY CURRENTS
Parameter
= = =AC Active Supply Current (lout 0 rnA, VCC Max, f fmax)
= = =AC Standby Current (E VIH, VCC Max, f fmax)
= =CMOS Standby Current (VCC Max, f 0 MHz, E ~ VCC - 0.2 V
Yin ~VSS + 0.2 V, or ~VCC-0.2 V)
Symbol
ICCA
ISBl
ISB2
32A32 32A32 32A64 32A64
33 MHz 50 MHz 33 MHz 50 MHz
840 920 1530 1680
250 280 465 520
110 110 190 190
Unit
rnA
rnA
rnA
MOTOROLA FAST SRAM DATA
MCM32A32.MCM32A64
5·7
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MCM32A32.PDF ] | |
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