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Toshiba - SILICON GATE CMOS STATIC RAM

Numéro de référence TC5589P-20
Description SILICON GATE CMOS STATIC RAM
Fabricant Toshiba 
Logo Toshiba 





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TC5589P-20 fiche technique
TOSHIBA
1l:5589P/]-15/20/25/35
SILICON GATE CMOS
8,192 WORD x 9 BIT CMOS STATIC RAM
Description
The TC5589P/J is a 73,728 bit high speed CMOS static random access memory organized as 8,192 words by 9 bits and operated
from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed~ration.
The TC5589P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output
enable input (OE) for fast memory access. Also, the device power between memory accesses is reduced by an automatic power
down circuit.
The TC5589P/J is suitable for use in high speed applicationssuch as cache memory and high speed storage. All inputs and
outputs are TIL compatible.
The TC5589P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.
Features
• Fast access time
-,
- TC5589P/J-15
- TC5589P/J-20
- TC5589P/J-25
- TC5589P/J-35
15ns (max.)
20ns (max.)
25ns (max.)
35ns (max.)
• Low power dissipation
- Operation:
- TC5589P/J-15
- TC5589P/J-20
- TC5589P/J-25
- TC5589P/J-35
- Standby:
135mA (max.)
115mA (max.)
115mA (max.)
115mA (max.)
1mA (max.)
• Single 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TIL compatible
• Output buffer control: OE
Pin Connection (Top View)
T(5589P
A8
A7
A6
AS
A4
A3
A2
Al
AO
1101
1/02
1103
1/04
GND
Voo
WE
CE2
A9
A10
All
OE
A12
eEl
1/09
1/08
1/07
1/06
1/05
T(5589J
A8
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1102
1/03
1104
GND
Voo
WE
CE2
A9
A10
All
OE
A12
ill
1109
1108
1/07
1/06
1/05
• Package:
- TC5589P: DIP28-P-300B
- TC5589J: SOJ28-P-300A
(DIP)
(SOJ)
Pin Names
AO -A12
1/01 - 1/09
CE1, CE2
WE
OE
Voo
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power (+5V)
Ground
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
8-17

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