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PDF 6MBP200RA-060 Data sheet ( Hoja de datos )

Número de pieza 6MBP200RA-060
Descripción Intelligent Power Module
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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6MBP 200RA-060
IGBT IPM
600V
6×200A
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
n Outline Drawing
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings
Units
Min. Max.
DC Bus Voltage
VDC
DC Bus Voltage (surge)
VDC(Surge)
DC Bus Voltage (short operating)
VSC
Collector-Emitter Voltage
VCES
Inverter
Continuous
IC
Collector
1ms
ICP
Current
Duty=58.8%
-IC
Collector Power Dissipation One Transistor PC
Voltage of Power Supply for Driver
VCC
Input Signal Voltage
VIN
Input Signal Current
IIN
Alarm Signal Voltage
VALM
Alarm Signal Current
IALM
Junction Temperature
Tj
Operating Temperature
TOP
Storage Temperature
Tstg
Isolation Voltage
A.C. 1min.
Viso
Screw Torque
Mounting *1
Terminals *1
0
0
200
0
0
0
0
-20
-40
450
500
400
600
200
400
200
735
20
VZ
1
VCC
15
150
100
125
2500
3.5
3.5
V
A
W
V
mA
V
mA
°C
V
Nm
Note: *1: Recommendable Value; 2.5 3.0 Nm (M5)
Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
Items
Collector Current At Off Signal Input
INV Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
ICES
VCE(Sat)
VF
Conditions
VCE=600V, Input Terminal Open
IC=200A
-IC=200A
Min.
Typ.
Max.
1.0
2.8
3.0
Units
mA
V
V
Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
Current of P-Line Side Driver (One Unit)
ICCP fSW=0~15kHz, TC=-20~100°C
Current of N-Line Side Driver (Three Units)
ICCN fSW=0~15kHz, TC=-20~100°C
Input Signal Threshold Voltage
VIN(th)
On
Off
Input Zener Voltage
VZ RIN=20k
Over Heating Protection Temperature Level
TCOH
VDC=0V, IC=0A, Case Temp.
Hysteresis
TCH
IGBT Chips Over Heating Protec. Temp. Level
TjOH
Surface of IGBT Chip
Hysteresis
TjH
Inverter Collector Current Protection Level
IOC Tj=125°C
Over Current Detecting Time
tDOC Tj=25°C
Alarm Signal Hold Time
tALM
Limiting Resistor for Alarm
RALM
Under Voltage Protection Level
VUV
Hysteresis
VH
Min.
6
24
1.00
1.70
110
150
300
1.5
1425
11.0
0.2
Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Symbols
Switching Time
tON
tOFF
tRR
Conditions
IC=200A, VDC=300V
IF=200A, VDC=300V
Min.
0.3
Typ.
1.35
2.05
8.0
20
20
10
2
1500
Typ.
Max.
32
114
1.70
2.40
Units
mA
V
125
°C
1575
12.5
A
µs
ms
V
Max.
3.6
0.4
Units
µs
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Diode
With Thermal Compound
Min.
Typ.
0.05
Max.
0.17
0.36
Units
°C/W

1 page




6MBP200RA-060 pdf
6MBP 200RA-060
IGBT IPM
600V
6×200A
n Inverter
100
Transient Thermal Resistance
10 -1
FWD
IGBT
10 -2
10 -3
10-2
10-1
Pulse Width : PW [sec]
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
Reverse Biased Safe Operating Area
VCC=15V, Tj<125°C
SCSOA
(non-repetitive pulse)
RBSOA
(repetitive pulse)
100 200 300 400 500 600
Collector-Emitter Voltage : VCE [V]
700
800
700
600
500
400
300
200
100
0
0
Power Derating For IGBT
(per device)
20 40 60 80 100 120 140 160
Case Temperature : TC (°C)
400
350
300
250
200
150
100
50
0
0
Power Derating For FWD
(per device)
20 40 60 80 100 120 140 160
Case Temperature : TC (°C)
30
25
20
15
10
5
0
0
Switching Loss vs. Collector Current
VDC=300V, VCC=15V, Tj=125°C
Eon
E off
E rr
50 100 150 200 250 300 350
30
25
20
15
10
5
0
0
Switching Loss vs. Collector Current
VDC=300V, VCC=15V, Tj=125°C
Eon
E off
E rr
50 100 150 200 250 300 350

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