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PDF ME4948 Data sheet ( Hoja de datos )

Número de pieza ME4948
Descripción Dual N-Channel 60-V (D-S) MOSFET
Fabricantes Matsuki 
Logotipo Matsuki Logotipo



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No Preview Available ! ME4948 Hoja de datos, Descripción, Manual

Dual N-Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4948 is the Dual N-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on state resistance. These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.
ME4948/ME4948-G
FEATURES
RDS(ON)53 mΩ@VGS=10V
RDS(ON)78 mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(SOP-8)
Top View
e Ordering Information: ME4948 (Pb-free)
ME4948-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25
Current(Tj=150)
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient *
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
Rating
60
±20
4.9
3.9
19
2
1.3
-55 to 150
62.5
* The device mounted on 1in2 FR4 board with 2 oz copper
Mar, 2010-Ver2.0
Unit
V
V
A
A
W
℃/W
01

1 page




ME4948 pdf
Dual N-Channel 60-V (D-S) MOSFET
ME4948/ME4948-G
SOP-8 Package Outline
Mar, 2010-Ver2.0
Symbol
A
A1
B
C
D
E
e
H
L
θ
MILLIMETERS (mm)
MIN MAX
1.35 1.75
0.10 0.25
0.35 0.49
0.18 0.25
4.80 5.00
3.80 4.00
1.27 BSC
5.80 6.20
0.40 1.25
0° 7°
05

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