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6R125P fiches techniques PDF

Infineon - Power Transistor

Numéro de référence 6R125P
Description Power Transistor
Fabricant Infineon 
Logo Infineon 





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6R125P fiche technique
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPB60R125CP
650 V
0.125
53 nC
PG-TO263
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
IPB60R125CP
Package
PG-TO263
Ordering Code
SP000088488
Marking
6R125P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value
25
16
82
708
1.2
11
50
±20
±30
208
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 1.0
page 1
2007-02-06

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