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PDF GW30NC120HD Data sheet ( Hoja de datos )
| Número de pieza | GW30NC120HD | |
| Descripción | STGW30NC120HD | |
| Fabricantes | STMicroelectronics | |
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STGW30NC120HD
N-channel 1200V - 30A - TO-247
very fast PowerMESH™ IGBT
Features
Type
VCES
STGW30NC120HD 1200V
VCE(sat)
@25°C
< 2.75V
IC
@100°C
30A
■ Low on-losses
■ Low on-voltage drop (Vcesat)
■ High current capability
■ High input impedance (voltage driven)
■ Low gate charge
■ Ideal for soft switching application
Application
■ Induction heating
Description
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances. The suffix “H”
identifies a family optimized for high frequency
application in order to achieve very high switching
performances (reduced tfall) maintaining a low
voltage drop.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW30NC120HD
GW30NC120HD
Package
TO-247
Packaging
Tube
October 2007
Rev 9
1/13
www.st.com
13
1 page  
STGW30NC120HD
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 960V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj=25°C (see Figure 17)
VCC = 960V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 17)
VCC = 960V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 17)
VCC = 960V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 17)
Min. Typ. Max. Unit
29
11
1820
ns
ns
A/µs
27
14
1580
ns
ns
A/µs
90 ns
275 ns
312 ns
150 ns
336 ns
592 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 960V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 17)
1660
4438
6098
µJ
µJ
µJ
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 960V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 17)
3015
6900
9915
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
Vf Forward on-voltage
If = 20A, Tj = 25°C
If = 20A, Tj = 125°C
trr Reverse recovery time
If = 20A, VR = 27V,
Qrr Reverse recovery charge Tj = 125°C, di/dt = 100A/µs
Irrm Reverse recovery current (see Figure 20)
Min.
Typ. Max. Unit
1.9 2.5
1.7
V
V
152 ns
722 nC
9A
5/13
5 Page 
STGW30NC120HD
Package mechanical data
DIM.
A
A1
b
b1
b2
c
D
E
e
L
L1
L2
øP
øR
S
MIN.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 MECHANICAL DATA
mm.
TYP
5.45
18.50
5.50
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
MIN.
0.19
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.14
0.140
0.177
inch
TYP.
0.214
0.728
0.216
MAX.
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.582
0.17
0.143
0.216
11/13
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