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Datasheet CJCD2007-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
CJC Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CJCD2004 | Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2004
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
10mΩ@10V 12mΩ @4.5V 13mΩ@3.8V 17mΩ@2.5V
ID
10A
DFNWB2X3-6L-C
DESCRIPTION The CJCD2004 uses advanced trench technology to provide
ex JCET mosfet | | |
2 | CJCD2005 | Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2005
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
13mΩ@10V 14mΩ @4.5V 15.5mΩ@3.8V 19 mΩ@2.5V 27mΩ@1.8V
ID
8A
DFNWB2× -6L-C
DESCRIPTION The CJCD2005 uses advanced trench technology JCET mosfet | | |
3 | CJCD2007 | Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2007
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
20 mΩ@10V 22 mΩ@4.5V 24mΩ@3.8V 26 mΩ@2.5V 35mΩ@1.8V
ID
7A
DFNWB2×3-6L-C
DESCRIPTION The CJCD2007 uses advanced trench technology to p JCET mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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