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Numéro de référence | CJMNP517 | ||
Description | N-Channel + P-Channel MOSFET | ||
Fabricant | JCET | ||
Logo | |||
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-U Plastic-Encapsulate MOSFETS
CJMNP517 N Channel +P Channel MOSFET
V(BR)DSS
12 V
-12V
RDS(on)MAX
24mΩ@10V
27mΩ@4.5V
42mΩ@ 2.5V
72mΩ@1.8V
45mΩ@-4.5V
60mΩ@-2.5V
90mΩ@-1.8V
ID
6A
-4.1A
DFNWB2X2-6L-U
FEATURE
Surface Mount Package
Super High Density Cell Design for
Extremely Low RDS(ON)
Exceptional On-resistance and
Maximum DC Current Capability
APPLICATION
Power Management In Note Book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
MARKING:
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
P-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
VDS
VGS
ID
IDM
IS
VDS
VGS
ID
IDM
IS
RθJA
TJ
TSTG
TL
Value
12
±12
6
24
6
-12
±12
-4.1
-16.4
-4.1
167
150
-55~+150
260
Unit
V
V
A
A
A
V
V
A
A
A
℃/W
℃
℃
℃
www.cj-elec.com
1
A-1,Feb,2015
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Pages | Pages 6 | ||
Télécharger | [ CJMNP517 ] |
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