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CJS6562 fiches techniques PDF

JCET - N- and P-Channel 12-V(G-S) MOSFET

Numéro de référence CJS6562
Description N- and P-Channel 12-V(G-S) MOSFET
Fabricant JCET 
Logo JCET 





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CJS6562 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP-8 Plastic-Encapsulate Transistors
CJS6562
P-channel
V(BR)DSS
-20V
N- and P-Channel 12-V(G-S) MOSFET
RDS(on)MAX
50 mΩ@-4.5V
90mΩ@-2.5V
ID
-3.5A 
TSSOP8
N-channel
V(BR)DSS
20V
RDS(on)MAX
30mΩ@ 4.5V
40mΩ@2.5V
ID
4.5A 
MARKING
Equivalent Circuit
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150)a
Ta=25
Ta=70
Pulsed Drain Current
Continuous Source Current(Diode Conduction)a
Power Dissipation a
Maximum Junction-to-Ambienta
Ta=25
Ta=70
Operating Junction and Storage Temperature
Notes :
a. Surface Mounted on FR4 board, t10S
Symbol
VDS
VGS
ID
IDM
IS
PD
RthJA
TJ, Tstg
N-Channel
20
±12
4.5
3.6
30
1.25
P-Channel
-20
±12
-3.5
-2.7
-30
-1.25
1.0
0.64
125
-55 ~150
Unit
V
A
W
/W
www.cj-elec.com
1
E,May,2015

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