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Numéro de référence | CJS6562 | ||
Description | N- and P-Channel 12-V(G-S) MOSFET | ||
Fabricant | JCET | ||
Logo | |||
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP-8 Plastic-Encapsulate Transistors
CJS6562
P-channel
V(BR)DSS
-20V
N- and P-Channel 12-V(G-S) MOSFET
RDS(on)MAX
50 mΩ@-4.5V
90mΩ@-2.5V
ID
-3.5A
TSSOP8
N-channel
V(BR)DSS
20V
RDS(on)MAX
30mΩ@ 4.5V
40mΩ@2.5V
ID
4.5A
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)a
Ta=25℃
Ta=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)a
Power Dissipation a
Maximum Junction-to-Ambienta
Ta=25℃
Ta=70℃
Operating Junction and Storage Temperature
Notes :
a. Surface Mounted on FR4 board, t≤10S
Symbol
VDS
VGS
ID
IDM
IS
PD
RthJA
TJ, Tstg
N-Channel
20
±12
4.5
3.6
30
1.25
P-Channel
-20
±12
-3.5
-2.7
-30
-1.25
1.0
0.64
125
-55 ~150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
E,May,2015
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Pages | Pages 6 | ||
Télécharger | [ CJS6562 ] |
No | Description détaillée | Fabricant |
CJS6562 | N- and P-Channel 12-V(G-S) MOSFET | JCET |
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