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PDF MT40A256M16 Data sheet ( Hoja de datos )

Número de pieza MT40A256M16
Descripción DDR4 SDRAM
Fabricantes Micron 
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No Preview Available ! MT40A256M16 Hoja de datos, Descripción, Manual

DDR4 SDRAM
MT40A1G4
MT40A512M8
MT40A256M16
Features
• VDD = VDDQ = 1.2V ±60mV
• VPP = 2.5V, –125mV/+250mV
• On-die, internal, adjustable VREFDQ generation
• 1.2V pseudo open-drain I/O
• TC maximum up to 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
• 16 internal banks (x4, x8): 4 groups of 4 banks each
• 8 internal banks (x16): 2 groups of 4 banks each
• 8n-bit prefetch architecture
• Programmable data strobe preambles
• Data strobe preamble training
• Command/Address latency (CAL)
• Multipurpose register READ and WRITE capability
• Write and read leveling
• Self refresh mode
• Low-power auto self refresh (LPASR)
• Temperature controlled refresh (TCR)
• Fine granularity refresh
• Self refresh abort
• Maximum power saving
• Output driver calibration
• Nominal, park, and dynamic on-die termination
(ODT)
• Data bus inversion (DBI) for data bus
• Command/Address (CA) parity
• Databus write cyclic redundancy check (CRC)
• Per-DRAM addressability
• Connectivity test (x16)
• sPPR and hPPR capability
• JEDEC JESD-79-4 compliant
4Gb: x4, x8, x16 DDR4 SDRAM
Features
Options1
• Configuration
– 1 Gig x 4
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (9mm x 11.5mm) – Rev. A
– 78-ball (9mm x 10.5mm) – Rev. B
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) – Rev. A
– 96-ball (9mm x 14mm) – Rev. B
• Timing – cycle time
– 0.625ns @ CL = 22 (DDR4-3200)
– 0.682ns @ CL = 20 (DDR4-2933)
– 0.682ns @ CL = 21 (DDR4-2933)
– 0.750ns @ CL = 18 (DDR4-2666)
– 0.750ns @ CL = 19 (DDR4-2666)
– 0.833ns @ CL = 16 (DDR4-2400)
– 0.833ns @ CL = 17 (DDR4-2400)
– 0.937ns @ CL = 15 (DDR4-2133)
– 0.937ns @ CL = 16 (DDR4-2133)
– 1.071ns @ CL = 13 (DDR4-1866)
• Operating temperature
– Commercial (0° TC 95°C)
– Industrial (–40° TC 95°C)
– Revision
Marking
1G4
512M8
256M162
HX
RH
HA
GE
-062E
-068E
-068
-075E
-075
-083E
-083
-093E
-093
-107E
None
IT
:A
:B
Notes:
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on http://www.micron.com
for available offerings.
2. Not available on Rev. A.
3. Restricted and limited availability.
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹ 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

1 page




MT40A256M16 pdf
4Gb: x4, x8, x16 DDR4 SDRAM
Features
Command Address Latency ........................................................................................................................ 59
Internal VREF Monitor ................................................................................................................................. 59
Maximum Power Savings Mode ................................................................................................................... 60
Mode Register 5 .............................................................................................................................................. 61
Data Bus Inversion ..................................................................................................................................... 62
Data Mask .................................................................................................................................................. 63
CA Parity Persistent Error Mode .................................................................................................................. 63
ODT Input Buffer for Power-Down .............................................................................................................. 63
CA Parity Error Status ................................................................................................................................. 63
CRC Error Status ......................................................................................................................................... 63
CA Parity Latency Mode .............................................................................................................................. 63
Mode Register 6 .............................................................................................................................................. 64
tCCD_L Programming ................................................................................................................................. 65
VREFDQ Calibration Enable .......................................................................................................................... 65
VREFDQ Calibration Range ........................................................................................................................... 65
VREFDQ Calibration Value ............................................................................................................................ 65
Truth Tables ................................................................................................................................................... 66
NOP Command .............................................................................................................................................. 69
DESELECT Command .................................................................................................................................... 69
DLL-Off Mode ................................................................................................................................................ 69
DLL-On/Off Switching Procedures .................................................................................................................. 71
DLL Switch Sequence from DLL-On to DLL-Off ........................................................................................... 71
DLL-Off to DLL-On Procedure .................................................................................................................... 73
Input Clock Frequency Change ....................................................................................................................... 74
Write Leveling ................................................................................................................................................ 75
DRAM Setting for Write Leveling and DRAM TERMINATION Function in that Mode ..................................... 76
Procedure Description ................................................................................................................................ 77
Write Leveling Mode Exit ............................................................................................................................ 78
Command Address Latency ............................................................................................................................ 80
Low-Power Auto Self Refresh Mode ................................................................................................................. 85
Manual Self Refresh Mode .......................................................................................................................... 85
Multipurpose Register .................................................................................................................................... 87
MPR Reads ................................................................................................................................................. 88
MPR Readout Format ................................................................................................................................. 90
MPR Readout Serial Format ........................................................................................................................ 90
MPR Readout Parallel Format ..................................................................................................................... 91
MPR Readout Staggered Format .................................................................................................................. 92
MPR READ Waveforms ............................................................................................................................... 93
MPR Writes ................................................................................................................................................ 95
MPR WRITE Waveforms .............................................................................................................................. 96
MPR REFRESH Waveforms ......................................................................................................................... 97
Gear-Down Mode .......................................................................................................................................... 100
Maximum Power-Saving Mode ....................................................................................................................... 103
Maximum Power-Saving Mode Entry .......................................................................................................... 103
Maximum Power-Saving Mode Entry in PDA .............................................................................................. 104
CKE Transition During Maximum Power-Saving Mode ................................................................................ 104
Maximum Power-Saving Mode Exit ............................................................................................................ 104
Command/Address Parity .............................................................................................................................. 106
Per-DRAM Addressability .............................................................................................................................. 114
VREFDQ Calibration ........................................................................................................................................ 117
VREFDQ Range and Levels ........................................................................................................................... 118
VREFDQ Step Size ........................................................................................................................................ 118
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹ 2014 Micron Technology, Inc. All rights reserved.

5 Page





MT40A256M16 arduino
4Gb: x4, x8, x16 DDR4 SDRAM
Features
Figure 51: CA Parity Error Checking – SRE Attempt ........................................................................................ 109
Figure 52: CA Parity Error Checking – SRX Attempt ........................................................................................ 110
Figure 53: CA Parity Error Checking – PDE/PDX ............................................................................................ 110
Figure 54: Parity Entry Timing Example – tMRD_PAR ..................................................................................... 111
Figure 55: Parity Entry Timing Example – tMOD_PAR ..................................................................................... 111
Figure 56: Parity Exit Timing Example – tMRD_PAR ....................................................................................... 111
Figure 57: Parity Exit Timing Example – tMOD_PAR ....................................................................................... 112
Figure 58: CA Parity Flow Diagram ................................................................................................................ 113
Figure 59: PDA Operation Enabled, BL8 ........................................................................................................ 115
Figure 60: PDA Operation Enabled, BC4 ........................................................................................................ 115
Figure 61: MRS PDA Exit ............................................................................................................................... 116
Figure 62: VREFDQ Voltage Range ................................................................................................................... 117
Figure 63: Example of VREF Set Tolerance and Step Size .................................................................................. 119
Figure 64: VREFDQ Timing Diagram for VREF,time Parameter .............................................................................. 120
Figure 65: VREFDQ Training Mode Entry and Exit Timing Diagram ................................................................... 121
Figure 66: VREF Step: Single Step Size Increment Case .................................................................................... 122
Figure 67: VREF Step: Single Step Size Decrement Case ................................................................................... 122
Figure 68: VREF Full Step: From VREF,min to VREF,maxCase .................................................................................. 123
Figure 69: VREF Full Step: From VREF,max to VREF,minCase .................................................................................. 123
Figure 70: VREFDQ Equivalent Circuit ............................................................................................................. 124
Figure 71: Connectivity Test Mode Entry ....................................................................................................... 128
Figure 72: hPPR WRA – Entry ........................................................................................................................ 131
Figure 73: hPPR WRA – Repair and Exit ......................................................................................................... 132
Figure 74: hPPR WR – Entry .......................................................................................................................... 133
Figure 75: hPPR WR – Repair and Exit ............................................................................................................ 133
Figure 76: sPPR – Entry ................................................................................................................................. 136
Figure 77: sPPR – Repair, and Exit ................................................................................................................. 136
Figure 78: tRRD Timing ................................................................................................................................ 139
Figure 79: tFAW Timing ................................................................................................................................. 139
Figure 80: REFRESH Command Timing ......................................................................................................... 141
Figure 81: Postponing REFRESH Commands (Example) ................................................................................. 141
Figure 82: Pulling In REFRESH Commands (Example) ................................................................................... 141
Figure 83: TCR Mode Example1 ..................................................................................................................... 143
Figure 84: 4Gb with Fine Granularity Refresh Mode Example ......................................................................... 146
Figure 85: OTF REFRESH Command Timing ................................................................................................. 147
Figure 86: Self Refresh Entry/Exit Timing ...................................................................................................... 150
Figure 87: Self Refresh Entry/Exit Timing with CAL Mode ............................................................................... 151
Figure 88: Self Refresh Abort ......................................................................................................................... 152
Figure 89: Self Refresh Exit with NOP Command ............................................................................................ 153
Figure 90: Active Power-Down Entry and Exit ................................................................................................ 155
Figure 91: Power-Down Entry After Read and Read with Auto Precharge ......................................................... 156
Figure 92: Power-Down Entry After Write and Write with Auto Precharge ........................................................ 156
Figure 93: Power-Down Entry After Write ...................................................................................................... 157
Figure 94: Precharge Power-Down Entry and Exit .......................................................................................... 157
Figure 95: REFRESH Command to Power-Down Entry ................................................................................... 158
Figure 96: Active Command to Power-Down Entry ......................................................................................... 158
Figure 97: PRECHARGE/PRECHARGE ALL Command to Power-Down Entry .................................................. 159
Figure 98: MRS Command to Power-Down Entry ........................................................................................... 159
Figure 99: Power-Down Entry/Exit Clarifications – Case 1 .............................................................................. 160
Figure 100: Active Power-Down Entry and Exit Timing with CAL .................................................................... 160
Figure 101: REFRESH Command to Power-Down Entry with CAL ................................................................... 161
Figure 102: ODT Power-Down Entry with ODT Buffer Disable Mode .............................................................. 162
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹ 2014 Micron Technology, Inc. All rights reserved.

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