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PDF MWS5114 Data sheet ( Hoja de datos )
| Número de pieza | MWS5114 | |
| Descripción | CMOS 1024-Word by 4-Bit LSI Static RAM | |
| Fabricantes | GE | |
| Logotipo |  |
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Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
MWS5114
A6
A5
A4
A3 4
AO
AI
A2- 7
cs
Vss
IS Vee
17 A7
16 AS
15 Ag
14 1/°1
13 1/02
12 "°3
1/°4
10 WE
92CS-30982RI
TERMINAL
ASSIGNMENT
CMOS
1024-Word by 4-Bit
LSI Static RAM
Features:
• Fully static operation
• Industry standard 1024 x 4 pinout (same as pinouts for 6514, 2114,
9114, and 4045 types)
• Common data input and output
• Memory retention for stand-by battery voltage as low as 2 V min.
• All Inputs and outputs dlfectly TTL compatible
• 3-state outputs
• Low standby and operating power
The RCA-MWS5114 IS a 1024-word by 4-bit static random-
access memory that uses the RCA ion-implanted silicon
gate complementary MOS (CMOS) technology. It is de-
signed for use in memory systems where low power and
simplicity in use are desirable. This type has common data
input and data output and utilizes a single power supply of
4.5 V to 6.5 V.
The MWS5114 is supplied In 18-lead, hermetic, dual-in-line
side-brazed ceramic packages (0 suffix) and in 18-lead
dual-in-line plastic packages (E suffix).
A4-------t~r---1
A5----{:::a::j
A6 ----D::::l ROW
A7 SELECT
MEMORY ARRAY
64 ROWS
64 COLUMNS
AS -----l:::c:J
1/A01g----~---;-;-:iJ:=:=:lc=~=_f~=~~~Fl::::==:::;_.
"°2 ---M+-l>--1 1~:i'..T
1/03 --1'+t-H>--I'CONTROL
I/04---rl++H>--l
ENABLE
92CS-30980RI
Fig. 1 - FunctIOnal block diagram for MWS5114
FUNCTION
Read
Write
Not
Selected
OPERATIONAL MODES
CS WE
DATA PINS
Output:
0 1 Dependent
on data
00
Input
1
X
High-
Impedance
File Number 1325
698 _______________~____________________________________
1 page  
Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
MWS5114
aDATA RETENTION CHARACTERISTICS at TA = to 70° C: See Fig. 4.
CHARACTERISTIC
TEST
CONDITIONS
VOR (V) Voo (V)
MIN.
LIMITS
ALL TYPES
TYP,"
MAX,
UNITS
Minimum Data
Retention Voltage
Data Retention Quiescent
Current, 100
VOR
MWS 5114-3
MWS 5114-2
MWS 5114-1
-
2
-
-
-
-
2- - V
- 25 50
- 25 50 IlA
- 60 125
Chip Deselect to Data
Retention Time,
Recovery to Normal
Operation Time,
-
teaR
-
lAc
5 300 -
5 300 -
-
ns
-
Voo to VOR Rise and
Fall Time
-2 5 1 -
t" tf
/1S
"Typical values are for TA = 25° C and nominal Voo.
DATA RETENT ION
MODE
92CS-311t4R2
Fig. 4 - Low Voo data retention timing waveforms.
702 ____________________________________________________________
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| PDF Descargar | [ Datasheet MWS5114.PDF ] | |
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