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UPD4104-1 fiches techniques PDF

NEC - 4096 x 1 STATIC NMOS RAM

Numéro de référence UPD4104-1
Description 4096 x 1 STATIC NMOS RAM
Fabricant NEC 
Logo NEC 





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UPD4104-1 fiche technique
NEe Microcomputers, Inc.
NEe
p.PD4104
p.PD41 04·1
pPD41 04·2
4096 x 1 STATIC NMOS RAM
DEseR IPTION
The J.LPD4104 is a high performance 4K static RAM. Organized as 4096 x 1, it uses
a combination of static storage cells with dynamic input/output circuitry to achieve
high speed and low power in the same device. Utilizing NMOS technology, the
J.LPD4104 is fully TTL compatible and operates with a single +5V ± 10% supply.
FEATURES ' . FastAccessTime-200ns (J.LPD4104-2)
• Very Low Stand-By Power - 28 mW Max.
• Low VCC Data Retention Mode to +3 Volts.
• Single +5V ±10% Supply.
• Fully TTL Compatible.
• Available in 18 Pin Plastic and Ceramic Dual-in-Line Packages.
• '3 Performance Ranges:
II
jlPD4104
jlPD4104-1
jlPD4104-2
ACCESS TIME
300 ns
250 ns
200 ns
RIWCYCLE
4S0 ns
.386 ~s
310 ns
SU PPL Y CURRENT
ACTIVE STANDBY LOWVCC
21 mA
5mA
5mA
21 mA
6mA
3.3mA
25mA
6mA
3.3mA
A3
A2
A1
AO
A"
AlO
DOUT
WE
VSS
VCC
A5
A4
A7
AS
Ag
AS
DIN
CE
PIN NAMES
AO-A11
CE
Address Inputs
Chip Enable
DIN
DOUT
VSS
VCC
WE
Data Input
Data Output
Ground
Power (+5V)
Write Enable
Rev/2
53

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