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PDF LA8506 Data sheet ( Hoja de datos )
| Número de pieza | LA8506 | |
| Descripción | 3A/40V Step-Down DC-DC Converter | |
| Fabricantes | INNO-TECH | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LA8506 (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
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General Description
LA8506
500KHz, 3A/40V Step-Down DC-DC Converter
Features
LA8506 is a current mode, step-down DC-DC
converter that is designed to meet 3A output
current, and utilizes PWM control scheme that
switches with 500KHz fixed frequency.
The input voltage range of LA8506 is from 8V
to 40V, and available in adjustable output
voltage from 1.222V to 24V. The supply
current is only 1mA during operation and
under 30uA in shutdown.
This device provides an enable function that
can be controlled by external logic signal. It
also provides excellent regulation during line
or load transient. Other features of soft-start
current limit, thermal shutdown protection,
and short circuit protection are also included.
Due to the low RDS(ON) of the internal power
MOSFET, this device provides high efficiency
step-down applications. The package is
available in standard ESOP-8.
l Adjustable Output from 1.222V to 24V
l 8V to 40V Input Voltage Range
l Continuous 3A Output Capability
l 500KHz Oscillation Frequency
l 1.222V +/- 1.5% Reference Voltage
l 30uA Low Shutdown Current
l 1mA Low Supply Current
l Current Mode for Excellent Response
l Support Low ESR Output Ceramic Capacitors
l Internal Current Limit
l Short Circuit Protection
l Thermal Shutdown Protection
l ESOP-8 Package
l Meet RoHS Standard
Applications
l Broadband Communication Device
l LCD TV / Monitor
l Storage Device
l Automotive Electronics
Ordering Information
Marking Information
LA8506 1 2 3 4
1 (Package Type) => P: ESOP
2 (Number of Pins) => G: 8pin
3 (Output Voltage) => Blank: Adjustable
4 (Special Feature) => Blank: N/A
Available Part Number
LA8506PG
LA8506PG
1234
1 2 (Date Code)
For date code rule, please contact our sales
representative directly
3 4 (Internal Code)
Rev01
-1-
Mar. 07, 2013
www.inno.com.tw
1 page  
Electrical Specifications
VIN=12V, TA=25ºC, unless otherwise noted.
Parameter
Test Condition
Feedback Voltage
Oscillation Frequency
Short Circuit Frequency
Maximum Duty Cycle
VFB=0V
VFB=1V
Minimum ON time
High Side MOSFET RDS(ON)
I=1A
Low Side MOSFET RDS(ON)
Current Limit
Error Amp. Voltage Gain,
AVEA
Error Amp. Transconductance,
GEA
Current Sense Transconductance,
GCS
Supply Current
VFB=1.5V
Shutdown Current
VEN=0V
EN Threshold Voltage
EN Pull Up Current
VEN=0V
Soft Start Bias Current
Over Temperature Shutdown
Over Temperature Shutdown
Hysteresis
LA8506
Min.
1.204
400
Typ.
1.222
500
100
85
100
10
4.3
Max.
1.240
Units
V
600 KHz
KHz
%
125 ns
mΩ
Ω
A
400 V/V
500 uA/V
3.3 A/V
0.85
1
30
1
5.5
4
150
25
1.2
60
1.15
mA
uA
V
uA
uA
oC
oC
Rev01
-5-
Mar. 07, 2013
www.inno.com.tw
5 Page 
LA8506
Thermal Considerations
Thermal protection limits total power dissipation in this device. When the junction temperature
reaches approximately 150°C, the thermal sensor signals the shutdown logic turning off this
device. The thermal sensor will turn this device on again after the IC's junction temperature cools
by approximately 25°C. For continuous operation, do not exceed the maximum operation junction
temperature 125°C.
The power dissipation across this device can be calculated by the following formula:
PD = ILOAD 2 × RDS(ON)x VOUT + 1 × VIN × IOUT × (tr + tf) × fS + Qg × VGS × fS + VIN × IS
VIN 2
Where fs is the 500KHz switching frequency, (tr+tf) is the switching time that is approximately
20ns, Qg is the power MOSFET gate charge that is approximately 15nC, VGS is the gate voltage of
the power MOSFET that is approximately 5V, and IS is the 1mA supply current.
The maximum power dissipation of this device depends on the thermal resistance of the IC
package and PCB layout, the temperature difference between the die junction and ambient air,
and the rate of airflow. The maximum power dissipation can be calculated by the following
formula:
PD(MAX)
=
(TJ-TA)
θJA
Where TJ -TA is the temperature difference between the die junction and surrounding
environment, θJA is the thermal resistance from the junction to the surrounding environment.
The value of junction to case thermal resistance θJC is also popular to users. This thermal
parameter is convenient for users to estimate the internal junction operated temperature of
packages while IC operating. The operated junction temperature can be calculated by the
following formula:
TJ = TC + PD × θJC
TC is the package case temperature measured by thermal sensor. Therefore it's easy to estimate
the junction temperature by any condition.
There are many factors affect the thermal resistance. Some of these factors include trace width,
copper thickness, total PCB copper area, and etc. For the best thermal performance, wide copper
traces and generous amounts of PCB copper should be used in the board layout. If further improve
thermal characteristics are needed, double sided and multi-layer PCB with large copper areas and
airflow will be recommended.
Rev01
- 11 -
Mar. 07, 2013
www.inno.com.tw
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet LA8506.PDF ] | |
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