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PDF HT0808-15A Data sheet ( Hoja de datos )
| Número de pieza | HT0808-15A | |
| Descripción | GaN Hybrid Power Amplifier | |
| Fabricantes | RFHIC | |
| Logotipo |  |
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GaN Hybrid Power Amplifier HT0808-15A
Product Features
• GaN on SiC HEMT
• 2-Stage Amplifier 50ohms Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
Applications
• RF Sub-Systems
• Base Station
• Repeater
• 4G/LTE system
• Small cell
Package Type : NP-1EL
Description
The HT0808-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP MAX
Frequency Range
MHz
869
-
894
Power Gain
34 37 39
Gain Flatness
dB -
0.6
-
Input Return Loss
- -10 -6.0
Pout @ Average
dBm
-
33
-
Pout @ Psat
dBm
40.8
41.5
-
ACLR @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-
-32 -27
-53 -
Drain Efficiency % 23
26
-
Total Ids mA - 280 -
V-
Supply Voltage
V-
-3.0
28
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
-2.0
-
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 50mA
Idq2 = 105mA
Pulse Width=50us, 10%Duty
Non DPD
With DPD
Pout @ Average
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
TYP
2
20.5 x 15 x 3.5
1/8
REMARK
-
-
All specifications may change without notice
Version 1.0
1 page  
GaN Hybrid Power Amplifier HT0808-15A
Performance Charts
* Bias condition @ Idq1= 50mA, Idq2= 105mA, Ta=25℃
Power Gain vs. Output Power
40
38
36
34
32
880MHz
30
30 31 32 33 34 35
Output Power[dBm]
ACLR vs. Output Power
-25
-27
-29
-31
-33
880MHz
-35
30
31 32 33 34
Output Power[dBm]
*LTE 10MHz (PAPR=7.5dB) w/o DPD
35
Ids2 vs. Output Power
350
300
250
200
150
100
30
880MHz
31 32 33 34
Output Power[dBm]
35
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
35
30
25
20
15
10
30
80
70
60
50
40
30
30
Efficiency vs. Output Power
880MHz
31 32 33 34
Output Power[dBm]
35
Ids1 vs. Output Power
880MHz
31 32 33 34
Output Power[dBm]
35
All specifications may change without notice
5 / 8 Version 1.0
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HT0808-15A.PDF ] | |
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