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PDF HT0808-30A Data sheet ( Hoja de datos )
| Número de pieza | HT0808-30A | |
| Descripción | GaN Hybrid Power Amplifier | |
| Fabricantes | RFHIC | |
| Logotipo |  |
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GaN Hybrid Power Amplifier HT0808-30A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
• Custom design available
Applications
• RF Sub-Systems
• Base Station
• Repeater
• LTE system
Package Type : NP-1EL
Description
The HT0808-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
869
-
894
Power Gain
35 37 39
Gain Flatness
dB -
0.3 1.0
Input Return Loss
- -12 -8
Pout @ Average dBm - 37 -
Pout @ Psat
dBm 44
45
-
ACLR @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-
-32 -28
-53 -
Drain Efficiency % 25
28
-
Ids
mA -
630 710
V-
-3.0 -2.0
Supply Voltage
V 27.5
28
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=37dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 110mA
Idq2 = 130mA
Pulse Width=50us, 10%Duty
Non DPD
With DPD
Pout @ Average
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 15 x 3.5
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [email protected]
US Facility : 919-677-8780 / [email protected]
1/8
All specifications may change without notice
Version 1.0
1 page  
GaN Hybrid Power Amplifier HT0808-30A
Performance Charts
* Bias condition @ Idq1= 110mA, Idq2= 130mA, Vds= 28V, Ta=25℃
Power Gain vs. Output Power
40
38
36
34
869MHz
32 881.5MHz
894MHz
30
34 35 36 37 38 39
Output Power[dBm]
39
37
35
33
31
29
27
25
23
21
19
17
15
34
Drain Efficiency vs. Output Power
869MHz
881.5MHz
894MHz
35 36 37 38 39
Output Power[dBm]
ACLR vs. Output Power
-28
-30
-32
-34
-36
-38
-40
-42
-44
34
869MHz
881.5MHz
894MHz
35 36 37 38
Output Power[dBm]
39
*LTE 10MHz (PAPR=7.5dB) w/o DPD
900
800
700
600
500
400
300
200
34
Ids vs. Output Power
Ids@869MHz
Ids @881.5MHz
Ids @894MHz
35 36 37 38
Output Power[dBm]
39
Korean Facilities : 82-31-250-5078 / [email protected]
US Facility : 919-677-8780 / [email protected]
5/8
All specifications may change without notice
Version 1.0
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HT0808-30A.PDF ] | |
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