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ON Semiconductor - Dual Bias Resistor Transistor

Numéro de référence IMD10AMT1G
Description Dual Bias Resistor Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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IMD10AMT1G fiche technique
IMD10AMT1G
Dual Bias Resistor
Transistor
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor
Network
High Current: IC = 500 mA max
This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
Collector−Emitter Voltage
V(BR)CEO
Emitter−Base Voltage
V(BR)EBO
Collector Current − Continuous
IC
THERMAL CHARACTERISTICS
50
50
5.0
500
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Power Dissipation*
PD 285 mW
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Total for both Transistors.
http://onsemi.com
(3) (2)
(1)
Q2
(4)
R1 Q1
R2
R1
(5)
SC−74
(6)
MARKING
DIAGRAM
6
1
SC−74R
318AA
Style 21
D10 M
G
D10 = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
IMD10AMT1G SC−74R 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 1
Publication Order Number:
IMD10AMT1G/D

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