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PDF MTA012A02CDV8 Data sheet ( Hoja de datos )
| Número de pieza | MTA012A02CDV8 | |
| Descripción | Common Drain Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTA012A02CDV8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C779V8
Issued Date : 2016.12.19
Revised Date :
Page No. : 1/9
Common Drain Dual N -Channel Enhancement Mode MOSFET
MTA012A02CDV8 BVDSS
ID
VGS=4.5V, TA=25°C
VGS=4.5V, ID=5A
RDSON (TYP.) VGS=2.5V, ID=2.6A
Features
VGS=1.8V, ID=1A
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Pb-free lead plating and halogen-free package
20V
9A
12.0 mΩ
16.2 mΩ
32.1 mΩ
Equivalent Circuit
MTA012A02CDV8
Outline
Pin 1
DFN3×3
G：Gate S：Source D：Drain
Ordering Information
Device
MTA012A02CDV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA012A02CDV8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C779V8
Issued Date : 2016.12.19
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss 1.2
1 ID=1mA
100 C oss
0.8
10
0
Crss
5 10 15
VDS, Drain-Source Voltage(V)
0.6 ID=250μA
0.4
20 -75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
VDS=10V
Ta=25°C
Pulsed
0.01 0.1
ID, Drain Current(A)
1
Gate Charge Characteristics
5
VDS=16V
4 ID=5A
3
2
1
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
1000
RDSON
100 Limited
10
1
TA=25°C, Tj=150°C
0.1 VGS=4.5V, RθJA=50°C/W
Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
100
MTA012A02CDV8
Maximum Drain Current vs Junction Temperature
10
9
8
7
6
5
4
3
2
1 TA=25°C, VGS=4.5V, RθJA=50°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTA012A02CDV8.PDF ] | |
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