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Número de pieza | MTB11N03Q8 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB11N03Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2012.03.26
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03Q8
BVDSS
ID
RDSON(max)
30V
16A
8.5mΩ
Description
The MTB11N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free and Halogen-free package
Symbol
MTB11N03Q8
Outline
Pin 1
SOP-8
G:Gate
D:Drain
S:Source
MTB11N03Q8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2012.03.26
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
C oss
100
Crss
f=1MHz
10
0.1 1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
Threshold Voltage vs Junction Tempearture
2
1.8 ID=250μA
1.6
1.4
1.2
1
0.8
-60
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
10
ID=16A
8 VDS=15V
VDS=10V
6
VDS=5V
4
2
0
0 5 10 15 20 25 30
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON) Limit
10μs
10 100μs
1ms
1 10ms
100ms
0.1 TA=25°C, Tj=150°C
VGS=10V,RθJA=125°C/W
Single Pulse
DC
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100
Maximum Drain Current vs Case Temperature
20
18
16
14
12
10
8
6
4
2
0
25
50 75 100 125 150
TC, Case Temperature(°C)
175
MTB11N03Q8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB11N03Q8.PDF ] |
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MTB11N03Q8 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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