|
|
Número de pieza | MTB20A03KQ8 | |
Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB20A03KQ8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C737Q8
Issued Date : 2015.04.24
Revised Date :
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTB20A03KQ8 BVDSS
30V
ID@VGS=10V, TA=25°C 7A
ID@VGS=10V, TA=70°C 5.6A
RDS(ON)@VGS=10V, ID=7A 14.7 mΩ(typ)
Features
• Single Drive Requirement
RDS(ON)@VGS=4.5V, ID=7A 18.8 mΩ(typ)
RDS(ON)@VGS=4V, ID=7A 21 mΩ(typ)
• Low On-resistance
• Fast Switching Characteristic
• ESD Protected
• Pb-free & Halogen-free package
Symbol
MTB20A03KQ8
Outline
SOP-8
G:Gate D:Drain S:Source
Ordering Information
Device
MTB20A03KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20A03KQ8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C737Q8
Issued Date : 2015.04.24
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
C oss
100
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
Crss
0.6 ID=250μA
10
0.1
10
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
1
6
0.1 VDS=5V
Ta=25°C
Pulsed
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
Limite
100μ s
10
1ms
1
0.1 TA=25°C, Tj=150°C
VGS=10V, RθJA=78°C/W
Single Pulse
0.01
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
10ms
100ms
1s
DC
100
4
2 VDS=15V
ID=8A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
9
8
7
6
5
4
3
2
1 TA=25°C, VGS=10V, RθJA=78°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB20A03KQ8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB20A03KQ8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB20A03KQ8 | Dual N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |