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PDF MTC4103N8J Data sheet ( Hoja de datos )
| Número de pieza | MTC4103N8J | |
| Descripción | P- & N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTC4103N8J (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C561N8J
Issued Date : 2016.12.27
Revised Date :
age No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTC4103N8J BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON@VGS=10V(-10V) typ.
RDSON@VGS=4.5V(-4.5V) typ.
RDSON@VGS=4V(-4V) typ.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
N-CH
30V
4.4A
6.3A
28mΩ
52mΩ
66mΩ
P-CH
-30V
-3.8A
-5.5A
49mΩ
67mΩ
75mΩ
Equivalent Circuit
MTC4103N8J
Outline
2928-8J
G：Gate S：Source D：Drain
Pin 1
Ordering Information
Device
MTC4103N8J-0-T1-G
Package
2928-8J
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTC4103N8J
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C561N8J
Issued Date : 2016.12.27
Revised Date :
age No. : 5/13
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
20
5V
15
10V, 9V, 8V, 7V, 6V
10 4V
1.4
1.2
1
0.8
Brekdown Voltage vs Ambient Temperature
5 3.5V
VGS=3V
0
0 1 23 4 5
VDS, Drain-Source Voltage(V)
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
1 Tj=25°C
VGS=4V
100
0.8
Tj=150°C
0.6
10
0.01
VGS=4.5V
VGS=10V
0.1 1
ID, Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400 ID=2A
350
300
250
200
150
100
50
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.4
0.2
0
2468
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.8
VGS=10V, ID=2A
2.4 RDS(ON)@Tj=25°C : 28mΩ typ.
2
1.6
1.2
0.8 VGS=4.5V, ID=1A
RDS(ON)@Tj=25°C : 52mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC4103N8J
CYStek Product Specification
5 Page 
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C561N8J
Issued Date : 2016.12.27
Revised Date :
age No. : 11/13
Carrier Tape Dimension
MTC4103N8J
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTC4103N8J.PDF ] | |
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