|
|
PDF MTD010P03V8 Data sheet ( Hoja de datos )
| Número de pieza | MTD010P03V8 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTD010P03V8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTD010P03V8
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 1/10
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
BVDSS
ID@ TC=25°C, VGS=-10V
ID@ TA=25°C, VGS=-10V
RDSON(MAX)@VGS=-10V, ID=-9A
RDSON(MAX)@VGS=-4.5V, ID=-5A
-30V
-40A
-10A
11mΩ(typ.)
16mΩ(typ.)
Equivalent Circuit
MTD010P03V8
Outline
Pin 1
DFN3×3
G：Gate S：Source D：Drain
Ordering Information
Device
MTD010P03V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTD010P03V8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C391V8
Issued Date : 2016.11.24
Revised Date :
Page No. : 5/10
Typical Characteristics
Typical Output Characteristics
80
10V, 9V, 8V, 7V,6V,5V
60
4V
40
20
0
0
3.5V
-VGS=3V
12 34
-VDS, Drain-Source Voltage(V)
5
1000
Static Drain-Source On-State resistance vs Drain Current
100
VGS=-4.5V
VGS=-10V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6 Tj=150°C
10
VGS=-20V
0.4
1
0.01
0.1 1
-ID, Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160 ID=-12A
140
120
100
80
60
40
20
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
-IS, Source Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8 VGS=-10V, ID=-9A
1.6
1.4
1.2
1
0.8
0.6 RDS(ON)@Tj=25°C : 11 mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD010P03V8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTD010P03V8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTD010P03V8 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |