|
|
PDF MTD080C10H8 Data sheet ( Hoja de datos )
| Número de pieza | MTD080C10H8 | |
| Descripción | P- & N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTD080C10H8 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C703H8
Issued Date : 2016.11.28
Revised Date :
Page No. : 1/14
N- AND P-Channel Enhancement Mode MOSFET
MTD080C10H8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
N-CH
100V
3.6A
10.4A
74mΩ
82mΩ
P-CH
-100V
-3.1A
-8.8A
114mΩ
128mΩ
Equivalent Circuit
MTD080C10H8
Outline
Pin 1
DFN5×6
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
MTD080C10H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD080C10H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Recommended Stencil Design
Spec. No. : C703H8
Issued Date : 2016.11.28
Revised Date :
Page No. : 5/14
Note : 1. Stencil thickness 5 mil (0.127mm)
2. May need to be adjusted to specific requirements.
MTD080C10H8
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Spec. No. : C703H8
Issued Date : 2016.11.28
Revised Date :
Page No. : 11/14
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
30
VDS=-10V
25
20
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
250 TJ(MAX)=150°C
TA=25°C
200 RθJA=50°C/W
15 150
10 100
5 50
0
01 234 56
-VGS, Gate-Source Voltage(V)
0
0.001
0.01
0.1 1
Pulse Width(s)
10 100
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTD080C10H8
CYStek Product Specification
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MTD080C10H8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTD080C10H8 | P- & N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |