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PDF MTDB6N20H8 Data sheet ( Hoja de datos )

Número de pieza MTDB6N20H8
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes Cystech Electonics 
Logotipo Cystech Electonics Logotipo



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No Preview Available ! MTDB6N20H8 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C875H8
Issued Date : 2016.12.19
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTDB6N20H8
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=3A
RDSON(typ)@VGS=4.5V, ID=2A
200 V
8A
1.8A
285 mΩ
287 mΩ
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
Symbol
MTDB6N20H8
GGate DDrain SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
Package
Shipping
MTDB6N20H8-0-T6-G
DFN5×6
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDB6N20H8
CYStek Product Specification

1 page




MTDB6N20H8 pdf
CYStech Electronics Corp.
Spec. No. : C875H8
Issued Date : 2016.12.19
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
100
C oss
10
0
Crss
10 20 30 40 50 60 70 80
VDS, Drain-Source Voltage(V)
90 100
0.8
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
Gate Charge Characteristics
10
VDS=100V
8 VDS=40V
6
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
VDS=160V
4
2
ID=3A
0
0 2 4 6 8 10 12 14 16
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
100
RDS(ON)
10 Limited
100μs
1
0.1 TC=25°C, Tj=150°C,
VGS=10V, RθJC=2.5°C/W
Single Pulse
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1ms
10ms
DC
1000
10
9
8
7
6
5
4
3
2
1
0
25
Maximum Drain Current vs Case Temperature
VGS=10V, RθJC=2.5°C/W
50 75 100 125 150
TC, Case Temperature(°C)
175
MTDB6N20H8
CYStek Product Specification

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