|
|
PDF MTE015N15RFP Data sheet ( Hoja de datos )
| Número de pieza | MTE015N15RFP | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTE015N15RFP (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE015N15RFP
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 1/ 8
Features
BVDSS
ID@TC=25C, VGS=10V
RDS(ON)@VGS=10V, ID=30A
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
150V
50A
16 mΩ(typ)
Symbol
MTE015N15RFP
Outline
TO-220FP
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
Package
Shipping
MTE015N15RFP-0-UB-X
TO-220FP
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE015N15RFP
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
100 Coss 0.8
10 Crss
0.6
0.4 ID=250μA
1
0 10 20 30 40 50 60 70 80
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=75V
8
6
VDS=120V
4
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
2
ID=85A
0
0 7 14 21 28 35 42 49 56 63 70
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
1000
Maximum Drain Current vs Case Temperature
60
RDS(ON)
100 Limited
10
10μs
100μs
1ms
10ms
1 TC=25°C, Tj=150°C,
VGS=10V,RθJC=1.2°C/W
single pulse
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
50
40
30
20
10 VGS=10V, RθJC=1.2°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTE015N15RFP
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTE015N15RFP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTE015N15RFP | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |