|
|
PDF MTE080A10Q8 Data sheet ( Hoja de datos )
| Número de pieza | MTE080A10Q8 | |
| Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTE080A10Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2016.11.28
Revised Date :
Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTE080A10Q8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & Halogen-free package
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDSON@VGS=10V, ID=2.5A
RDSON@VGS=6V, ID=2.0A
100V
2.8A
5.0A
74mΩ(typ)
82mΩ(typ)
Equivalent Circuit
MTE080A10Q8
Outline
SOP-8
D2
D2
D1
D1
G：Gate D：Drain S：Source
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTE080A10Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating and halogen-free package)
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE080A10Q8
Preliminary
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2016.11.28
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
NormalizedThreshold Voltage vs Junction Tempearture
1.4
Ciss
100
C oss
10
0
Crss
10 20 30 40
VDS, Drain-Source Voltage(V)
50
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
Gate Charge Characteristics
10
VDS=25V
8
VDS=50V
6
0.1 VDS=10V
Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDS(ON)
10 Limited
100μs
1ms
1
10ms
100ms
0.1 1s
0.01 TA=25°C, Tj=150°, VGS=10V
RθJA=78°C/W, Single Pulse
DC
0.001
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
4
VDS=65V
2
ID=2.7A
0
0 2 4 6 8 10
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
3
2.5
2
1.5
1
0.5 VGS=10V, RθJA=78°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTE080A10Q8
Preliminary
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTE080A10Q8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTE080A10Q8 | Dual N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |