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Número de pieza | MTE2D0N04F3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTE2D0N04F3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C072F3
Issued Date : 2016.03.04
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE2D0N04F3
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
40V
84A
17.3A
2.1 mΩ(typ)
Symbol
MTE2D0N04F3
Outline
TO-263
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTE2D0N04F3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE2D0N04F3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C072F3
Issued Date : 2016.03.04
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Crss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
100
0
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100 10
10
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
8 VDS=20V
6
VDS=32V
4
2
ID=84A
0
0 20 40 60 80 100 120 140
Total Gate Charge---Qg(nC)
1000
100
RDS(ON)
Limited
Maximum Safe Operating Area
10μs
100μs
10
1 TC=25°C, Tj=175°C,
VGS=10V, RθJC=0.9°C/W
Single Pulse
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
DC
100
Maximum Drain Current vs Case Temperature
200
180 Silicon Limit
160
140
120
100
80
Package Limit
60
40
20 VGS=10V, RθJC=0.9°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE2D0N04F3
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTE2D0N04F3.PDF ] |
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