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MTE2D4N06E3 fiches techniques PDF

Cystech Electonics - N-Channel Enhancement Mode Power MOSFET

Numéro de référence MTE2D4N06E3
Description N-Channel Enhancement Mode Power MOSFET
Fabricant Cystech Electonics 
Logo Cystech Electonics 





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MTE2D4N06E3 fiche technique
CYStech Electronics Corp.
Spec. No. : C933E3
Issued Date : 2013.03.20
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE2D4N06E3 BVDSS
ID @VGS=10V
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
60V
120A
2.6mΩ
2.8mΩ
Features
Simple Drive Requirement
Fast Switching Characteristic
RoHS compliant package
Symbol
MTE2D4N06E3
Outline
TO-220
GGate
DDrain
SSource
GDS
Ordering Information
Device
Package
MTE2D4N06E3-0-UB-S
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE2D4N06E3
CYStek Product Specification

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