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PDF MTE2D4N06F3 Data sheet ( Hoja de datos )
| Número de pieza | MTE2D4N06F3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE2D4N06F3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C933F3
Issued Date : 2015.12.11
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE2D4N06F3 BVDSS
ID @VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
60V
60A
3.3mΩ
3.5mΩ
Features
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTE2D4N06F3
Outline
TO-263
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTE2D4N06F3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE2D4N06F3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C933F3
Issued Date : 2015.12.11
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Crss
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
100
0
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100 10
10
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
1000
100
10
RDS(ON)
Limited
Maximum Safe Operating Area
10μs
100μs
1ms
10ms
100ms
DC
1
TC=25°C, Tj=175°, VGS=10V
RθJC=0.45°C/W, Single
Pl
0.1
0.1 1
10 100
VDS, Drain-Source Voltage(V)
1000
8
6
4
2 VDS=30V
ID=120A
0
0 20 40 60 80 100 120 140 160
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
200
silicon limit
160
120
80 package limit
40
VGS=10V, RθJC=0.45°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE2D4N06F3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTE2D4N06F3.PDF ] | |
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