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PDF NSBC123JPDXV6 Data sheet ( Hoja de datos )
| Número de pieza | NSBC123JPDXV6 | |
| Descripción | Complementary Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5335DW1,
NSBC123JPDXV6,
NSBC123JPDP6
Complementary Bias
Resistor Transistors
R1 = 2.2 kW, R2 = 47 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5335DW1T1G,
SMUN5335DW1T1G
SOT−363
3,000/Tape & Reel
MUN5335DW1T2G,
SMUN5335DW1T2G
SOT−363
3,000/Tape & Reel
NSBC123JPDXV6T1G,
NSVBC123JPDXV6T1G*
SOT−563
4,000/Tape & Reel
NSBC123JPDXV6T5G
SOT−563
8,000/Tape & Reel
NSBC123JPDP6T5G
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 3
1
www.onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT−363
CASE 419B
6
35 M G
G
1
SOT−563
CASE 463A
35 M G
G
1
SOT−963
CASE 527AD
MG
1G
35/D
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Publication Order Number:
DTC123JP/D
1 page  
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5335DW1, NSBC123JPDXV6
1
IC/IB = 10
25°C
150°C
0.1
−55°C
1000
100
10
25°C
VCE = 10 V
150°C
−55°C
0.01
0
7
6
5
4
3
2
1
00
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
1
50 1
10 100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
f = 10 kHz
IE = 0 A
TA = 25°C
100
150°C
10
1
0.1
−55°C
25°C
1000
10 20 30 40
VR, REVERSE BIAS VOLTAGE (V)
Figure 9. Output Capacitance
10
0.01
0.001
50 0
VO = 5 V
1 23
Vin, INPUT VOLTAGE (V)
4
Figure 10. Output Current vs. Input Voltage
25°C
1 −55°C
150°C
0.1
0
VO = 0.2 V
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 11. Input Voltage vs. Output Current
www.onsemi.com
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