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Numéro de référence | RWP03040-50 | ||
Description | Wideband Power Amplifier | ||
Fabricant | RFHIC | ||
Logo | |||
Wideband Power Amplifier
RWP03040-50
Product Features
• GaN on SiC Broadband High Power Amplifier
• 20 ~ 500MHz Operation Bandwidth
• Power Gain 37dB min.
• 40W Typical. @ P3dB
Applications
• General Purpose
Package Type : DP-75
Description
The power amplifier module is designed for Broadcasting, Telecommunication, Medical and Other markets.
Operating frequency range is from 20 ~ 500MHz.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband
performance is already applied.
Improved thermal handling by patented technology.
Electrical Specifications @ VCC = 28V; Tc = 45°C; ZS = ZL = 50Ω
PARAMETER
Operating Frequency
Power Gain
Power Gain Flatness
P3 dB
Input Return Loss
Supply Voltage
Quiescent Current consumption
Current consumption
UNIT
MHz
dB
dBpp
dBm
dB
V
A
A
MIN
20
37
-
45
46
-
27.5
-
-
TYP
-
39
±1.0
-
-
-8
28
3.2
4.0
MAX
500
42
±2.0
-
-
-6
28.5
3.5
4.5
On/Off Switching Time*
uS -
4.0 5.0
Shut Down or Switch On/Off
0 - 0.5
TTL Voltage**
V
2.5 - 5.5
Note.
*. Gate On/Off : High speed switching
**. Drain On/Off : 500ms delay
CONDITION
-
Pout 46dBm(Typ)
Pout 46dBm(Typ)
20 ~ 100MHz
100 ~ 500MHz
-
-
-
Pout = 46W(Typ), CW
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “Low”
Off : TTL “High”
Absolute Maximum Ratings
PARAMETER
Drain Voltage
Operating Case Temperature
Storage Temperature
Vibration
UNIT
V
°C
°C
MIN
TYP
MAX
- 30
-
-10 -
80
-30 -
90
MIL-STD-810G Method 514.6 ANNEX C
SYMBOL
VDS
Tc
Tstg
VI
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
1/5
All specifications may change without notice
Version 1.9
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Pages | Pages 5 | ||
Télécharger | [ RWP03040-50 ] |
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