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RFHIC - Wideband Power Amplifier

Numéro de référence RWP06040-60
Description Wideband Power Amplifier
Fabricant RFHIC 
Logo RFHIC 





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RWP06040-60 fiche technique
Wideband Power Amplifier
RWP06040-60
Product Features
• GaN on SiC Broadband High Power Amplifier
• 500 ~ 1000MHz Operation Bandwidth
• Small Signal Gain 40dB min.
• 40W Typical. @ P3dB
Applications
• General Purpose
Package Type : DP-75
Description
The power amplifier module is designed for Broadcasting, Telecommunication, Medical and Other markets.
Operating frequency range is from 500 ~ 1000MHz.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband
performance is already applied.
Improved thermal handling by patented technology.
Electrical Specifications @ VCC = 28V; Tc = 45°C; ZS = ZL = 50Ω
PARAMETER
Operating Frequency
Small Signal Gain
Gain Variation vs Frequency
P3 dB
UNIT
MHz
dB
dBpp
dBm
MIN
500
40
-
44
46
TYP
-
42
±1
45
47
OIP3 @ Po = +33dBm
(1MHz Tone spacing, CW 2-Tone)
dBm
46
48
Input Return Loss
dB -
-5
MAX
1000
44
±2
-
-
-
-3
2nd Harmonic suppression
dBc -
-35 -30
Supply Voltage
Quiescent Current consumption
Current Consumption
V 27.5
A-
A-
28
3
4.5
30
3.5
5
On/Off Switching Time*
uS - 3 5
Shut Down or Switch On/Off
0 - 0.5
V
TTL Voltage**
2.5 5 5.5
Note.
*. Gate On/Off : High speed switching
**. Drain On/Off : 500ms delay
CONDITION
-
-
-
500 ~ 700MHz
700 ~ 1000MHz
500 ~ 1000 MHz
-
CW 1-tone
@Po = +30dBm, Freq 500MHz
Vcc(=Vds)
-
CW 1-tone @ Po=+46dBm
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “Low”(Enable)
Off : TTL “High”
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
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All specifications may change without notice
Version 2.0

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