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SSF1N80D fiches techniques PDF

GOOD-ARK - 800V N-Channel MOSFET

Numéro de référence SSF1N80D
Description 800V N-Channel MOSFET
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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SSF1N80D fiche technique
Main Product Characteristics
SSF1N80D
800V N-Channel MOSFET
VDSS
800V
RDS(on) 13Ω (typ.)
ID 1A
TO-252(DPAK)
Features and Benefits
Advanced MOSFET process technology
Ideal for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150ºC operating temperature
Marking and Pin
Assignment
Schematic
Diagram
Description
The SSF1N80D utilizes the latest processing techniques to achieve high cell density, low on-
resistance and high repetitive avalanche rating. These features make this device extremely efficient
and reliable device for use in power switching applications and a wide variety of other applications.
Absolute Max Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
1
0.75
4
44
0.36
800
± 30
50
1
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
1/6

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