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SSF6014J8 fiches techniques PDF

Silikron Semiconductor - MOSFET ( Transistor )

Numéro de référence SSF6014J8
Description MOSFET ( Transistor )
Fabricant Silikron Semiconductor 
Logo Silikron Semiconductor 





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SSF6014J8 fiche technique
Main Product Characteristics:
VDSS
60V
RDS(on)
ID
16mΩ (typ.)
22A
Features and Benefits:
DFN3.3x3.3
Bottom view
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175operating temperature
SSF6014J8
Pin Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25
IDM
PD @TC = 25
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
22
88
48
60
± 20
60
20
-55 to + 175
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
3.1
53
Units
A
W
V
V
mJ
A
Units
/W
/W
©Silikron Semiconductor CO.,LTD.
2015.01.20
www.silikron.com
Version : 1.0
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