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PDF SSF7509J7 Data sheet ( Hoja de datos )
| Número de pieza | SSF7509J7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
80V
RDS(on) 7.5mΩ(typ.)
ID 70A
Features and Benefits:
PQFN5*6
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF7509J7
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
70
60
280
98
2.0
80
± 20
375
50
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2014.12.30
www.silikron.com
Version :1.0
page 1 of 7
1 page  
Mechanical Data：
PQFN 5*6 Package Outline Dimension. (Unit: mm)
SSF7509J7
©Silikron Semiconductor CO., LTD.
2014.12.30
www.silikron.com
Version: 1.0
page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF7509J7.PDF ] | |
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