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Silikron Semiconductor - MOSFET ( Transistor )

Numéro de référence SSF8N80ZF
Description MOSFET ( Transistor )
Fabricant Silikron Semiconductor 
Logo Silikron Semiconductor 





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SSF8N80ZF fiche technique
                                
Main Product Characteristics:
SSF8N80ZF 
VDSS
800V
RDS(on) 1.1(typ.)
ID 8A
Features and Benefits:
  
TO-220F 
Marking and pin
Assignment 
Schematic diagram 
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
ESD Rating(HBM) :4KV
 
 
 
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications. 
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=25mH
Avalanche Current @ L=25mH
Operating Junction and Storage Temperature Range
Max.
8
5.1
32
45
0.36
800
± 20
320
5
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2015.01.09
www.silikron.com 
Version : 1.0
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