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Numéro de référence | SSF8N80ZF | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Silikron Semiconductor | ||
Logo | |||
Main Product Characteristics:
SSF8N80ZF
VDSS
800V
RDS(on) 1.1Ω (typ.)
ID 8A
Features and Benefits:
TO-220F
Marking and pin
Assignment
Schematic diagram
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
ESD Rating(HBM) :4KV
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=25mH
Avalanche Current @ L=25mH
Operating Junction and Storage Temperature Range
Max.
8
5.1
32
45
0.36
800
± 20
320
5
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2015.01.09
www.silikron.com
Version : 1.0
page 1 of 9
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Pages | Pages 9 | ||
Télécharger | [ SSF8N80ZF ] |
No | Description détaillée | Fabricant |
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