DataSheetWiki


SSIG15N135H fiches techniques PDF

Silikron Semiconductor - MOSFET ( Transistor )

Numéro de référence SSIG15N135H
Description MOSFET ( Transistor )
Fabricant Silikron Semiconductor 
Logo Silikron Semiconductor 





1 Page

No Preview Available !





SSIG15N135H fiche technique
Main Product Characteristics:
VCES
1350V
VCE(sat) 1.9V (typ.)
ID 15A @ TC = 100°C
Features and Benefits:
Advanced Trench-FS Process Technology
Low Collector-Emitter Saturation Voltage, Typical
Data is 1.9V@15A
Fast Switching
High Input Impedance
Pb- Free Product
Power Switch Circuit of Induction Cooker
TO-247
SSIG15N135H
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating. These
features combine to make this design an extremely efficient and reliable device for use in power switching
application of induction cooker and a wide variety of other applications.
Absolute max Rating:
Symbol
IC @ TC = 25°C
IC @ TC = 100°C
ICM
PD @TC = 25°C
VCES
VGES
TJ
TSTG
TL
Parameter
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Power Dissipation@ TC = 25°C
Power Dissipation@ TC = 100°C
Collector-Emitter Voltage
Gate-to-Emitter Voltage
Operating Junction Temperature Range
Storage Temperature Range
Maximum Temperature of Solding
Max.
30
15
45
260
130
1350
± 30
-55 to +175
-55 to +175
260
Units
A
W
W
V
V
°C
°C
°C
©Silikron Semiconductor CO.,LTD.
2015.03.09
www.silikron.com
Version : 1.0
page 1 of 9

PagesPages 9
Télécharger [ SSIG15N135H ]


Fiche technique recommandé

No Description détaillée Fabricant
SSIG15N135H MOSFET ( Transistor ) Silikron Semiconductor
Silikron Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche