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SSF10N90F1 fiches techniques PDF

Silikron Semiconductor - MOSFET ( Transistor )

Numéro de référence SSF10N90F1
Description MOSFET ( Transistor )
Fabricant Silikron Semiconductor 
Logo Silikron Semiconductor 





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SSF10N90F1 fiche technique
Main Product Characteristics:
VDSS
900V
RDS(on) 0.85Ω(typ.)
ID 10A
Features and Benefits:
Advanced MOSFET process technology
Low On Resistance
Low Gate Charge
Fast switching and reverse body recovery
TO-3P
SSF10N90F1
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25
ID @ TC = 100
IDM
PD @TC = 25
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=20mH
Avalanche Current @ L=20mH
Operating Junction and Storage Temperature Range
Max.
10
7
40
170
1.36
900
± 30
300
5.5
-55 to +150
Units
A
W
W/
V
V
mJ
A
©Silikron Semiconductor CO., LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
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