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ROHM Semiconductor - 4V Drive Nch+Nch MOSFET

Numéro de référence SP8K24FRA
Description 4V Drive Nch+Nch MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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SP8K24FRA fiche technique
Transistor
4V Drive Nch+Nch MOSFET
SP8K244FRA
SP8SKP284KF2R4A
AEC-Q101 Qualified
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
zApplications
Power switching , DC / DC converter , Inverter
zDimensions (Unit : mm)
SOP8
5.0
0.4
(8) (5)
1.75
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging dimensions
Package
Type
Code
Basic ordering unit (pieces)
SPSP8K8K242F4RA
Taping
TB
2500
zEquivalent circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW 10µs、Duty cycle 1%
*2 Mounted on a ceramic board
Symbol Limits
Unit
VDSS
45
V
VGSS
±20
V
ID ±6.0
A
IDP *1
±24
A
IS 1
A
ISP *1
24
A
PD *2
2
1.4
W / TOTAL
W / ELEMENT
Tch 150
Tstg -55 to +150
oC
oC
Rev.B
1/4

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