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PDF CMD50N06B Data sheet ( Hoja de datos )
| Número de pieza | CMD50N06B | |
| Descripción | N-Channel 60V MOSFET | |
| Fabricantes | Cmos | |
| Logotipo |  |
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CMD50N06B/CMU50N06B
N-Channel 60V MOSFET
General Description
The 50N06B combines advanced trench
MOSFET technology with a low resistance
package to provide extremely low RDS(ON).
This device is ideal for boost converters
and synchronous rectifiers for consumer,
telecom, industrial power supplies and
LED backlighting.
Features
50A,60V.RDS(ON)=0.013Ω@VGS=10V
N-channel-Enhancement mode
Low Threshold Drive
100% Avalanche Tested
Green Device Available
Absolute Maximum Ratings
Product Summery
BVDSS
60V
RDSON
13m
ID
50A
Applications
DC-DC & DC-AC Converters
Motor Control, Audio Amplifiers
High Current, High Speed Switching
Primary Switch for 12V and 24V system
TO252 / TO251 Pin Configuration
GDS
TO252
(CMD50N06B)
G DS
TO251
(CMU50N06B)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
20
50
35
150
85
35
75
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction -Case
Typ.
---
---
Max.
50
2.1
Unit
/W
/W
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CMD50N06B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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