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CMB75N80 fiches techniques PDF

Cmos - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CMB75N80
Description N-Channel Enhancement Mode Field Effect Transistor
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CMB75N80 fiche technique
CMP75N80/CMB75N80/CMI75N80
N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summery
The 75N80 is N-Channel MOSFET,
It has specifically been designed to
minimize input capacitance and gate
charge. The device is therefore suitable
in advanced high-efficiency switching
applications.
Features
BVDSS
80V
RDSON
11m
Applications
Motor Control
DC-DC converters
Switching applications
ID
75A
Minimize input capacitance and gate charge
100% avalanche rated
Low On-Resistance
TO220/263/262 Pin Configuration
Absolute Maximum Ratings
G
DS
TO-220
(CMP75N80)
GD
S
TO-263
(CMB75N80)
G DS
TO-262
(CMI75N80)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Single Pulse Avalanche Energy2
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Value
80
20
75
60
230
400
75
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case
Value
37
2
Unit
/W
/W
1

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