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CMD20N06L fiches techniques PDF

Cmos - 60V N-Channel MOSFET

Numéro de référence CMD20N06L
Description 60V N-Channel MOSFET
Fabricant Cmos 
Logo Cmos 





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CMD20N06L fiche technique
CMD20N06L/CMU20N06L
60V N-Channel MOSFET
General Description
The 20N06 combines advanced trench
MOSFET technology .This advanced
technology has been especially tailored
to minimize on-state resistance, provide
superior switching performance.
These devices are well suited for low voltage
applications such as automotive, DC/DC
converters, and high efficiency switching for
power management in portable and battery
operated products.
Features
20A,60V.RDS(ON)=0.046Ω@VGS=10V
Fast switching
Low Threshold Drive
Absolute Maximum Ratings
Product Summery
BVDSS
60V
RDSON
46m
ID
20A
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
TO252 / TO251 Pin Configuration
GDS
TO252
(CMD20N06L)
G DS
TO251
(CMU20N06L)
Symbol
VDS
VGS
ID@TA=25
ID@TA=100
IDM
EAS
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
20
20
10
60
170
60
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient (Note 2)
Thermal Resistance Junction -Case
Typ.
---
---
Max.
80
2.5
Unit
/W
/W
1

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