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CMN2308 fiches techniques PDF

Cmos - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CMN2308
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant Cmos 
Logo Cmos 





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CMN2308 fiche technique
CMN2308
N-Channel Enhancement Mode Field Effect Transistor
General Description
The CMN2308 is the N-Channel
enhancement mode power field effect
transistors using advanced trench
technology to provide excellent RDS(ON).
These devices are particularly suited for
low voltage application , such as high side
power loss of mobile phone and notebook
computer power management and other
battery power supply circuit of the switch
and the low line, need to be in a very small
outline surface mount package.
Features
RDS(ON)<105mΩ @ VGS=10V
RDS(ON)<125mΩ @ VGS=4.5V
SOT-23 Package
Absolute Maximum Ratings
Product Summery
BVDSS
60V
RDSON
105m
ID
3A
Applications
DC-DC converters
Portable Equipment
LCD Display inverter
Load Switch
SOT-23 Pin Configuration
D
S
G
SOT-23
(CMN2308)
D
◀▲
G
S
Symbol
VDS
VGS
ID@TC=25
IDM
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
20
3
5
1
-55 to 150
-55 to 150
Units
V
V
A
A
W
Thermal Data
Symbol
R JA
Parameter
Thermal Resistance Junction-ambient
Rating
150
Unit
/W
1

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