(PDF) CMN2309 Datasheet - P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CMN2309
Descripción	P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Cmos
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No Preview Available ! CMN2309 P-Channel Enhancement Mode Field Effect Transistor General Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. Features RDS(ON)<250mΩ @ VGS=-10V RDS(ON)<300mΩ @ VGS=-4.5V Fast switching speed Surface mount package Absolute Maximum Ratings Product Summery BVDSS -60V RDSON 250m ID -1.6A Applications DC-DC converters Relay and solenoid driving Power management functions Load switch SOT-23 Pin Configuration D S G SOT-23 (CMN2309) G D S Symbol VDS VGS ID IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating -60 20 -1.6 -6 1 -55 to 150 150 Units V V A A W Thermal Data Symbol R JA Parameter Thermal Resistance Junction-abmient (t≤5s) Typ. --- Max. 120 Unit /W 1 1 page

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PDF CMN2309 Data sheet ( Hoja de datos )