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CMN2305 fiches techniques PDF

Cmos - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CMN2305
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant Cmos 
Logo Cmos 





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CMN2305 fiche technique
CMN2305
P-Channel Enhancement Mode Field Effect Transistor
General Description
The CMN2305 is P-channel enhancement
mode Power MOSFET, designed in serried
ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface
mount applications and suited for low voltage
applications such as DC/DC converters.
Features
RDS(ON)<65mΩ @ VGS=-4.5V
RDS(ON)<80mΩ @ VGS=-2.5V
Simple drive requirement
Surface mount package
Absolute Maximum Ratings
Product Summery
BVDSS
-20V
RDSON
65m
Applications
PWM applications
Load switch
Power management
PA Switch
SOT-23 Pin Configuration
D
S
G
SOT-23
(CMN2305)
G
ID
-3.9A
D
S
Symbol
VDS
VGS
ID@TC=25
IDM
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
10
-3.9
-15
1.2
-55 to 150
-55 to 150
Units
V
V
A
A
W
Thermal Data
Symbol
R JA
Parameter
Thermal Resistance Junction-ambient
Typ.
---
Max.
90
Unit
/W
1

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