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CMU2N60D fiches techniques PDF

Cmos - 600V N-Channel MOSFET

Numéro de référence CMU2N60D
Description 600V N-Channel MOSFET
Fabricant Cmos 
Logo Cmos 





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CMU2N60D fiche technique
CMD2N60D/CMU2N60D
General Description
600V N-Channel MOSFET
Product Summery
The 2N60D have been fabricated using an
advanced high voltage MOSFET process
that is designed to deliver high levels of
performance and robustness in popular
AC-DC applications.
Features
BVDSS
600V
RDSON
5
ID
2A
Applications
Power Supply
PFC
High Current,High Speed Switching
2A, 600V, RDS(on) = 5Ω @VGS = 10 V
Fast switching
100% Avalanche Tested
TO252 / TO251 Pin Configuration
D
Improved dv/dt capability
ESD Improved capability
Absolute Maximum Ratings
GDS
TO252
(CMD2N60D)
TC = 25°C unless otherwise noted
G D S TO251
(CMU2N60D)
Symbol
Parameter
Value
VDSS
ID
IDM
VGSS
EAS
IAR
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed a
Gate-Source Voltage
Single Pulsed Avalanche Energy b
Avalanche Current a
600
2
1.14
6
± 30
120
2
EAR Repetitive Avalanche Energy a
3.8
dv/dt
Peak Diode Recovery dv/dt c
4.5
PD Power Dissipation (TC = 25°C)
45
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
-55 to +150
300
G
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
S
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
Value
2.87
0.5
50
Units
°C/W
°C/W
°C/W
1

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