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PDF HMC849ALP4CE Data sheet ( Hoja de datos )
| Número de pieza | HMC849ALP4CE | |
| Descripción | HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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HMC849ALP4CE
v00.1013
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 6 GHz
Typical Applications
The HMC849ALP4CE is ideal for:
• Cellular/4G Infrastructure
• WiMAX, WiBro & Fixed Wireless
• Automotive Telematics
• Mobile Radio
• Test Equipment
Features
High Isolation: up to 60 dB
Single Positive Control: 0/+3V to +5V
High Input IP3: +52 dBm
Non-Reflective Design
“All Off” State
16 Lead 4x4 mm QFN Package: 16 mm²
Functional Diagram
General Description
The HMC849ALP4CE is a high isolation non-reflec-
tive DC to 6 GHz GaAs pHEMT SPDT switch in a low
cost leadless surface mount package. The switch is
ideal for cellular/WiMAX/4G Infrastructure applicati-
ons yielding up to 60 dB isolation, low 0.8 dB inser-
tion loss and +52 dBm input IP3. Power handling
is excellent up through the 5 - 6 GHz WiMAX band
with the switch offering a P1dB compression point of
+31 dBm. On-chip circuitry allows a single positive
voltage control of 0/+3V or 0/+5V at very low DC
currents. An enable input (EN) set to logic high will put
the switch in an “all off” state.
Electrical Specifications, TA = +25 °C, Vctl = 0/Vdd, Vdd = +3V to +5V, 50 Ohm System
Insertion Loss
Parameter
Isolation (RFC to RF1/RF2)
Return Loss (On State)
Return Loss (Off State)
Input Power for 1 dB Compression
+3V
+5V
Input Third Order Intercept
(Two-Tone Input Power = +10 dBm Each Tone)
Switching Speed
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
Frequency
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 4.0 GHz
4.0 - 6.0 GHz
DC - 6.0 GHz
0.35 - 6.0 GHz
DC - 6.0 GHz
DC - 6.0 GHz
Min.
53
48
35
24
30
Typ.
Max.
Units
0.9
1.0
1.8
1.3
1.5
2.5
dB
dB
60
56
50
dB
dB
17 dB
14 dB
15 dB
27 dBm
33 dBm
52 dBm
60 ns
150 600 ns
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1 page  
v00.1013
HMC849ALP4CE
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 6 GHz
Absolute Maximum Ratings
Bias Voltage (Vdd)
7V
Control Voltage (Vctl, EN)
-1V to Vdd +1V
RF Input Power *
Through Path 3V/5V 31 / 33 dBm
Termination Path 3V/5V 26.5 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 14.9 mW/°C for through path, and
6.9 mW/°C for termination path above 85 °C)
Through Path
Termination Path
0.969 W
0.451 W
Thermal Resistance
(channel to package bottom)
Through Path
Termination Path
67.1 °C/W
144.2°C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
ESD Sensitivity (HBM)
-40 to +85 °C
Class 1A
* The RF input power is quite lower than the breakdown
power levels. Hence, the only concern with this product
is the thermal limit.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Bias Voltage & Current
Vdd
(V)
3
5
Idd (Typ.)
(mA)
1.2
1.3
Digital Control Voltages
State
Low
High
Bias Condition
0 to +0.8 Vdc @ <1 µA Typical
+2.0 to +5.0 Vdc @ 40 µA Typical
Truth Table
Control Input
Vctl EN
Low Low
High
Low
Low High
High
High
Signal Path State
RFC - RF1
RFC - RF2
OFF
ON
ON OFF
OFF
OFF
OFF
OFF
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4
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HMC849ALP4CE.PDF ] | |
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