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Numéro de référence | HMC349AMS8G | ||
Description | SPDT Switch | ||
Fabricant | Analog Devices | ||
Logo | |||
1 Page
Data Sheet
High Isolation, Nonreflective,
GaAs, SPDT Switch,100 MHz to 4 GHz
HMC349AMS8G
FEATURES
Nonreflective, 50 Ω design
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
1 dB power compression (P1dB): 34 dBm typical
Third-order intercept (IP3): 52 dBm typical
High power handling
33.5 dBm through path
26.5 dBm terminated path
Single positive supply: 3 V to 5 V
CMOS-/TTL-compatible control
All off state control
8-lead mini small outline package with exposed pad
(MINI_SO_EP)
APPLICATIONS
Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment
GENERAL DESCRIPTION
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-
morphic high electron mobility transistor (PHEMT), single-pole,
double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure
applications by yielding high isolation of 57 dB, low insertion
loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB
of 34 dBm.
FUNCTIONAL BLOCK DIAGRAM
RF2
HMC349AMS8G
VDD
RFC
50Ω
EN
CTRL
50Ω GND
RF1
Figure 1.
The HMC349AMS8G operates with a single positive supply
voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible
control interface.
The HMC349AMS8G comes in an 8-lead mini small outline
package with an exposed pad.
Rev. C
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Technical Support
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Pages | Pages 11 | ||
Télécharger | [ HMC349AMS8G ] |
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