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PDF HMC573LC3B Data sheet ( Hoja de datos )
| Número de pieza | HMC573LC3B | |
| Descripción | SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v03.0514
HMC573LC3B
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 22 GHz OUTPUT
Typical Applications
The HMC573LC3B is suitable for:
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military & Space
Functional Diagram
Features
High Output Power: +12 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: >20 dBc @ Fout= 16 GHz
100 KHz SSB Phase Noise: -134 dBc/Hz
Single Supply: +5V@ 92 mA
RoHS Compliant 3x3 mm SMT Package
General Description
The HMC573LC3B is a x2 active broadband frequ-
ency multiplier utilizing GaAs PHEMT technology in a
leadless RoHS compliant SMT package. When driven
by a +5 dBm signal, the multiplier provides +12 dBm
typical output power from 8 to 22 GHz. The Fo and
3Fo isolations are >20 dBc and >25 dBc respectively
at 16 GHz. The HMC573LC3B is ideal for use in LO
multiplier chains for Pt-to-Pt & VSAT Radios yielding
reduced parts count vs. traditional approaches. The
low additive SSB Phase Noise of -134 dBc/Hz at
100 kHz offset helps maintain good system noise
performance. The RoHS packaged HMC573LC3B
eliminates the need for wire bonding, and allows the
use of surface mount manufacturing techniques.
Electrical Specifications, TA = +25°C, Vdd = +5V, 5 dBm Drive Level
Parameter
Min.
Typ.
Frequency Range, Input
4 - 11
Frequency Range, Output
8 - 22
Output Power
9 12
Fo Isolation (with respect to output level)
20
3Fo Isolation (with respect to output level)
25
4Fo Isolation (with respect to output level)
15
Input Return Loss
10
Output Return Loss
10
SSB Phase Noise (100 kHz Offset)
-134
Supply Current (Idd) (Vdd = 5V, Vgg = -1.25V Typ.)
92
*Adjust Vgg between -1.5 and ~1.1V to achieve Idd = 92 mA
Max.
Units
GHz
GHz
dBm
dBc
dBc
dBc
dB
dB
dBc/Hz
mA
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1 page  
v03.0514
HMC573LC3B
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 22 GHz OUTPUT
Absolute Maximum Ratings
RF Input (Vdd = +5V)
Supply Voltage (Vdd)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 8.0 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+10 dBm
+6.0 Vdc
175 °C
719 mW
125 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Typical Supply Current vs. Vdd
Vdd (Vdc)
4.5
5.0
5.5
Idd (mA)
90
92
94
Note:
Multiplier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER
50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC573LC3B
Alumina, White
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Lead Finish
Gold over Nickel
MSL Rating
MSL3 [1]
Package Marking [2]
H573
XXXX
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4
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| PDF Descargar | [ Datasheet HMC573LC3B.PDF ] | |
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