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PDF HMC213AMS8E Data sheet ( Hoja de datos )
| Número de pieza | HMC213AMS8E | |
| Descripción | GaAs MMIC SMT Double-Balanced Mixer | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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HMC213AMS8 / 213AMS8E
v02.1210
GaAs MMIC SMT Double-
Balanced Mixer, 1.5 - 4.5 GHz
10
Typical Applications
The HMC213AMS8(E) is ideal for:
• Base Stations
• PCMCIA Transceivers
• Wireless Local Loop
Features
Ultra Small Package: MSOP8
Conversion Loss: 8.5 dB
LO / RF Isolation: 40 dB
Functional Diagram
General Description
The HMC213AMS8(E) is a ultra miniature double-
balanced mixer in 8 lead plastic surface mount
package (MSOP). This passive MMIC mixer is
constructed of GaAs Schottky diodes and novel
planar transformer baluns on the chip. The device can
be used as an upconverter, downconverter, biphase
(de)modulator, or phase comparator. The consistent
MMIC performance will improve system operation and
assure regulatory compliance.
Electrical Specifications, TA = +25° C, As a Function of LO Drive
Parameter
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
1 dB Gain Compression (Input)
Min.
29
27
16
7
LO = +13 dBm
IF = 100 MHz
Typ.
1.5 - 4.5
DC - 1.5
8.5
8.5
40
35
19
10
Max.
10
10
LO = +10 dBm
IF = 100 MHz
Min. Typ.
1.7 - 3.6
DC - 1.5
9
9
32 40
26 35
14 18
58
Max.
10.5
10.5
Units
GHz
GHz
dB
dB
dB
dB
dBm
dBm
10 - 1
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1 page  
HMC213AMS8 / 213AMS8E
v02.1210
GaAs MMIC SMT Double-
Balanced Mixer, 1.5 - 4.5 GHz
MxN Spurious Outputs
nLO
mRF
0
1
2
3
0 xx 12.7 20.8 19.8
1
13.4
0
39.8
38.9
2
73.8
78.2
66.5
82.2
3
93.8
89.2
92.2
82.4
4
>105
>105
>105
>105
RF = 3.5 GHz @ -10 dBm
LO = 3.6 GHz @ +13 dBm
All values in dBc below IF power level (-1RF + 1LO)
4
76.2
56.2
68.8
89.0
>105
Absolute Maximum Ratings
RF / IF Input
LO Drive
Continuous Pdiss (T = 85 °C)
(derate 10.6 mW/°C above 85 °C)
Thermal Resistance
(Channel to package lead)
Junction Temperature
Storage Temperature
Operating Temperature
+13 dBm
+27 dBm
0.69 W
93.7 °C/W
150 °C
-65 to +150 °C
-40 to +85 °C
Harmonics of LO @ RF Port
LO Freq.
(GHz)
nLO Spur
1 23
1.5 40 30 62
2.0 38 25 55
2.5 41 28 34
3.0 41 35 36
3.5 38 45 52
4.0 35 47 55
4.5 33 50 65
5.0 32 52 68
LO = +13 dBm
Values in dBc below input LO level measured at RF Port.
4
57
58
61
61
62
62
73
82
10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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10 - 4
5 Page | ||
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| PDF Descargar | [ Datasheet HMC213AMS8E.PDF ] | |
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