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PDF HMC7327 Data sheet ( Hoja de datos )

Número de pieza HMC7327
Descripción GaN Flange Mount MMIC Power Amplifier
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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Preliminary Technical Data
120 Watt, GaN Flange Mount MMIC
Power Amplifier, 2.7 GHz to 3.8 GHz
HMC7327
FEATURES
High PSAT: 51 dBm
Power gain at PSAT: 20 dB
Small signal gain: 26 dB
Supply Voltage
VDD = 32 V at 1400 mA
50 Ω matched input and output
10-lead flange package
APPLICATIONS
Test instrumentation
General communications
Radar
GENERAL DESCRIPTION
The HMC7327 is a 120 W gallium nitride (GaN), MMIC power
amplifier that operates between 2.7 GHz and 3.8 GHz, packaged
in a 10-lead flange mount package.
The amplifier typically provides 26 dB of small signal gain and
51 dBm saturated output power. The amplifier draws 1400 mA
quiescent current from a 32 V dc supply. For ease of use, the RF
input/outputs are dc blocked and matched to 50 Ω.
FUNCTIONAL BLOCK DIAGRAM
VGG2
VGG1
RFIN
VGG1
VGG2
1
2
3
4
5
HMC7327
PACKAGE
BASE
GND
Figure 1.
10
VDD1
9
VDD2
8
RFOUT
7
VDD2
6
VDD1
Rev. PrA
Document Feedback
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responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com

1 page




HMC7327 pdf
HMC7327
Preliminary Technical Data
TOTAL SUPPLY CURRENT BY VDD
Table 3.
Parameter
SUPPLY CURRENT
VDD = 24 V
VDD = 28 V
VDD = 32 V
Symbol
IDD
Min Typ Max Unit Test Conditions/Comments
Adjust the gate bias voltage (VGGx) between −8 V and 0 V
to achieve an IDD = 1400 mA, typical
1400
mA
1400
mA
1400
mA
Rev. PrA | Page 4 of 13

5 Page





HMC7327 arduino
HMC7327
60
55
50
45
40 GAIN
P4dB
35 PSAT
30
25
20
15
10
24 26 28 30 32 34 36
VDD (V)
Figure 27. Gain and Power vs. Supply Voltage at 3.2 GHz, PSAT Defined as
Output Power at PIN = 31 dBm at 25°C
50
45
40
35
30
25
+85°C
20 +25°C
–40°C
15
10
5
0
2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
FREQUENCY (GHz)
Figure 28. Second Harmonics vs. Frequency at Various Temperatures,
POUT = 35 dBm
50
45
40
35
30
25
25dBm
20 30dBm
35dBm
15 40dBm
44dBm
10
5
0
2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
FREQUENCY (GHz)
Figure 29. Second Harmonics vs. Frequency at Various POUT Levels
Preliminary Technical Data
60
55
50
45
40 GAIN
P4dB
35 PSAT
30
25
20
15
10
700
900 1100 1300 1500 1700 1900 2100
IDD (mA)
Figure 30. Gain and Power vs. Supply Current at 3.2 GHz, PSAT Defined as
Output Power at PIN = 31 dBm at 25°C
50
45
40
35
30
25
24V
20 28V
32V
15
10
5
0
2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
FREQUENCY (GHz)
Figure 31. Second Harmonics vs. Frequency at Various Supply Voltages,
POUT = 35 dBm
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
0
2.7GHz
3.0GHz
3.3GHz
3.6GHz
3.8GHz
5 10 15 20 25
INPUT POWER (dBm)
Figure 32. Power Dissipation at 85°C
30
35
Rev. PrA | Page 10 of 13

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